More Views
TOSHIBA MG200H1AL2 IGBT MODULE
Quick Overview
Manufactured By: TOSHIBA
Manufacturer Part Number: MG200H1AL2
IMS Product Code: 1824943
Packaging: Sold Individually
Description:
Toshiba MG200H1AL2 IGBT Module
Toshiba MG200H1AL2 is an IGBT power transistor module used for high-power switching applications. It features a single NPN silicon transistor with a free-wheeling diode and is designed for motor control and other high-power switching needs.
Specifications
- Collector-Emitter Voltage (VCES): 600V
- Collector Current (IC): 200A
- Total Power Dissipation (PC): 780W
- Collector-Emitter Saturation Voltage (VCE(sat)): 2.7V (Max)
- Diode Forward Voltage (VECF): 2.5V (Max)
- Thermal Resistance (Rth(j-c)) - IGBT: 0.16 degrees C/W
- Type: IGBT Power Transistor Module
- Material: Silicon
- Package Material: Plastic/Epoxy
- Number of Pins: 3
- Configuration: Single transistor module
- Weight: approximately 210g
Used:
A previously used, fully functional product that may have some signs of cosmetic wear.
Availability: 2 In Stock
Ships Tomorrow
Emergency after hours shipping may be available.
Call (888) 437-6645 for more information.
