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TOSHIBA MG300N1FK2 IGBT MODULE
Quick Overview
Manufactured By: TOSHIBA
Manufacturer Part Number: MG300N1FK2
IMS Product Code: 1824931
Packaging: Sold Individually
Description:
Toshiba MG300N1FK2 IGBT Module
N-Channel Insulated Gate Bipolar Transistor (IGBT) Power Module, 1200V, 300A
Specifications
- Collector-Emitter Voltage: 1200 V
- Peak Surge Current: 300 A
- Collector Power Dissipation: 2000 W
- Gate-Emitter Voltage: ±20 V
- Junction Temperature: 150?
- Storage Temperature Range: -40 ~ 125?
- Isolation Voltage: 2500 V
- Screw Torque: 3 N·m
- Type: N-Channel IGBT
- Country of Origin: Japan
New - Missing Box:
A new, unused item with no signs of wear. The item may be missing the original packaging.
Availability: 8 In Stock
Ships today if ordered in the next 11 hours and 3 minutes.
